Hydrogen release and defect generation rate in ultra-thin oxides [MOSFET devices]

Author

Huard, V. ; Denais, M. ; Monsieur, F.

Author_Institution

Philips Semicond., Crolles, France

fYear

2004

fDate

18-21 Oct. 2004

Firstpage

4

Lastpage

6

Abstract

This work shows the interaction between the hydrogen release at the interface (interface traps creation) and the generation of oxide defects (as monitored by SILC). Besides, temperature dependence as well as pre-stress experiments clearly demonstrate that the diffusion-limited model cannot explain the hydrogen release time dynamics. A new disorder-related reaction-limited model is introduced. It successfully explains complex interface trap creation phenomena.

Keywords

MOSFET; dielectric thin films; hydrogen; interface states; leakage currents; semiconductor device breakdown; semiconductor device models; H; MOSFET; MOSFET devices; SILC increase; diffusion-limited model; disorder-related reaction-limited model; hydrogen release time dynamics; interface trap creation; interface trap density; oxide breakdown; oxide defect generation rate; temperature dependence; ultra-thin oxides; Computational Intelligence Society; Degradation; Electric breakdown; Equations; Hydrogen; Monitoring; Physics; Predictive models; Stress; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Reliability Workshop Final Report, 2004 IEEE International

Print_ISBN

0-7803-8517-9

Type

conf

DOI

10.1109/IRWS.2004.1422726

Filename

1422726