DocumentCode
3073221
Title
Etching of InP in methane-based plasmas
Author
Adesida, I. ; Andideh, E. ; Jones, C. ; Finnegan, N.
Author_Institution
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
fYear
1990
fDate
23-25 April 1990
Firstpage
405
Lastpage
408
Abstract
Analyses of InP and SiO/sub 2/ mask surfaces etched in CH/sub 4//H/sub 2/ plasma have been performed using X-ray photoelectron spectroscopy and Auger electron spectroscopy. A relatively thick polymer layer was detected on the mask surface, whereas polymer deposition on etched InP surface was insignificant even under plasma conditions designed to enhance polymer formation. Subsequent processing of etched InP in O/sub 2/ plasma followed by a dip in HCl/H/sub 2/O was found to be sufficient for obtaining clean surfaces with good stoichiometry.<>
Keywords
Auger effect; III-V semiconductors; X-ray photoelectron spectra; indium compounds; sputter etching; Auger electron spectroscopy; InP; O/sub 2/ plasma; SiO/sub 2/ mask surfaces; X-ray photoelectron spectroscopy; clean surfaces; methane-H/sub 2/; methane-based plasmas; stoichiometry; thick polymer layer; Electrons; Etching; Indium phosphide; Performance analysis; Plasma applications; Plasma materials processing; Plasma x-ray sources; Polymers; Spectroscopy; Surface cleaning;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1990. Second International Conference.
Conference_Location
Denver, CO, USA
Type
conf
DOI
10.1109/ICIPRM.1990.203056
Filename
203056
Link To Document