DocumentCode :
3073232
Title :
Variations in surface morphology of ion implanted InP after rapid thermal annealing
Author :
Stevanovic, D. ; Ferret, P. ; Thompson, D.
Author_Institution :
Centre for Electrophotonic Mater. & Devices, McMaster Univ., Hamilton, Ont., Canada
fYear :
1990
fDate :
23-25 April 1990
Firstpage :
409
Lastpage :
413
Abstract :
A change in the surface morphology of
Keywords :
Auger effect; III-V semiconductors; incoherent light annealing; indium compounds; ion implantation; scanning electron microscope examination of materials; surface structure; transmission electron microscope examination of materials; 1023 K; 130 keV; 300 K; Auger analyses; InP; InP proximity cap; InP:Fe; InP:Fe, Se; SEM; defect analysis; ion implementation; radiation damage; rapid thermal annealing; surface cloudiness; surface degradation; surface morphology; transmission electron microscopy; Heat treatment; Implants; Indium phosphide; Ion implantation; Rapid thermal annealing; Reflectivity; Scanning electron microscopy; Surface morphology; Surface treatment; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 1990. Second International Conference.
Conference_Location :
Denver, CO, USA
Type :
conf
DOI :
10.1109/ICIPRM.1990.203057
Filename :
203057
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3073232
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