Title :
Characterization of unintentionally-ordered superlattice resonant-tunneling diodes
Author :
Seabaugh, A. ; Kao, Y. ; Liu, H. ; Luscombe, J. ; Tsai, H. ; Reed, M. ; Gnade, B. ; Frensley, W.
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
Abstract :
In the molecular-beam-epitaxy growth of ternary and quaternary InGaAs and In(GaAl)As alloys on InP it is observed that the layer composition is ordered in the direction of growth. This ordering is caused by the nonuniform distribution of beam fluxes at the rotating substrate with an ordering period determined by the combined effects of growth rate and substrate rotation rate. The effect of the ordering is to produce a strained-layer superlattice whose properties can be inferred from the current-voltage characteristics of resonant-tunneling diodes. The physical and electrical characteristics of these rotation-induced superlattices are described utilizing several one-dimensional theoretical approaches to calculate the miniband structure and interpret the experimental data.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; molecular beam epitaxial growth; resonant tunnelling devices; semiconductor growth; semiconductor superlattices; tunnel diodes; InGaAs-InGaAlAs-InP; InP; beam flux distribution; current-voltage characteristics; electrical characteristics; growth rate; layer composition ordering; miniband structure; molecular-beam-epitaxy growth; one-dimensional theoretical approaches; substrate rotation rate; unintentionally-ordered superlattice resonant-tunneling diodes; Diodes; Electrons; Indium gallium arsenide; Indium phosphide; Laser sintering; Molecular beam epitaxial growth; Resonant tunneling devices; Space heating; Substrates; Superlattices;
Conference_Titel :
Indium Phosphide and Related Materials, 1990. Second International Conference.
Conference_Location :
Denver, CO, USA
DOI :
10.1109/ICIPRM.1990.203058
