Detection of compositional non-uniformities in InP:Fe via spatially resolved photoluminescence and secondary ion mass spectrometry

Author

Carver, G. ; Moore, R. ; Trapp, K.C. ; Kahora, P. ; Stevie, F.

Author_Institution

AT&T Bell Lab., Princeton, NJ, USA

fYear

1990

fDate

23-25 April 1990

Firstpage

428

Lastpage

434

Abstract

Semi-insulating InP wafers for electronic and opto-electronic devices must have spatially uniform resistivities (above 1E7 Omega -cm) for high-yield manufacture. Spatially resolved photoluminescence scans have revealed localized regions of high luminescent efficiency in liquid-encapsulated-Czochralski InP:Fe obtained from two commercial suppliers. These bright spots have dimensions in the micron range, and a density approaching 1E5/cm/sup 2/. Secondary ion mass spectroscopy has shown that the spots contain silicon and iron contaminants. The silicon concentration exceeds 1E20/cm/sup 3/, whereas the iron concentration is 100 times below that of the silicon. A resistivity below 1 Omega -cm would be expected near the spots. These features may generate parasitic capacitance that could affect the yield of integrated circuits and opto-electronic arrays.<>

Keywords

III-V semiconductors; crystal growth from melt; impurity distribution; indium compounds; iron; luminescence of inorganic solids; photoluminescence; secondary ion mass spectra; semiconductor growth; substrates; GEC growth; InP:Fe substrates; compositional nonuniformities; contaminants; high luminescent efficiency; integrated circuits; opto-electronic arrays; secondary ion mass spectrometry; spatially resolved photoluminescence; Conductivity; Indium phosphide; Iron; Manufacturing; Mass spectroscopy; Optoelectronic devices; Parasitic capacitance; Photoluminescence; Silicon; Spatial resolution;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1990. Second International Conference.

Conference_Location

Denver, CO, USA

Type

conf

DOI

10.1109/ICIPRM.1990.203068

Filename

203068