DocumentCode :
3073531
Title :
Effects of capillary forces on the global thinning of copper metallization under electromigration stress
Author :
Choy, Jun-Ho ; Zhang, Yan ; Kavanagh, Karen L.
Author_Institution :
Dept. of Phys., Simon Fraser Univ., Burnaby, BC, Canada
fYear :
2004
fDate :
18-21 Oct. 2004
Firstpage :
75
Lastpage :
78
Abstract :
The global thinning of copper interconnections is modeled via the shape evolution of voids located at the copper/dielectric interface under electromigration stress conditions. The model includes the instabilities driven by both capillary and electron wind forces, and employs an axisymetric 3D finite difference numerical method, combined with the boundary element method, for solving the electrostatic problem. With zero electric field or with small fields applied, a large void experiences a capillary instability which leads to open circuit failure. As the electric field becomes larger, the numerical solution predicts that the growth of this instability is suppressed and the void shape stabilizes. Thus, for a typical electromigration stress condition, a large copper void elongates its shape along the interface parallel to the electric field, suggesting a mechanism for the delayed open circuit failure observed in copper metallization systems.
Keywords :
boundary-elements methods; capillarity; copper; electromigration; electrostatics; finite difference methods; integrated circuit interconnections; integrated circuit metallisation; integrated circuit modelling; integrated circuit reliability; surface diffusion; voids (solid); Cu; atomic transport; axisymetric 3D finite difference numerical method; boundary element method; capillary force effects; capillary instability growth; copper/dielectric interface; delayed open circuit failure; electric field parallel void elongation; electron wind forces; electrostatics; metallization global thinning; migration stress; surface diffusion; void shape evolution; void shape stabilization; Boundary element methods; Copper; Dielectrics; Electromigration; Electrons; Finite difference methods; Integrated circuit interconnections; Metallization; Shape; Stress;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Reliability Workshop Final Report, 2004 IEEE International
Print_ISBN :
0-7803-8517-9
Type :
conf
DOI :
10.1109/IRWS.2004.1422743
Filename :
1422743
Link To Document :
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