Title :
Mechanism of dynamic NBTI of pMOSFETs
Author :
Zhu, B. ; Suehle, J.S. ; Bernstein, J.B. ; Chen, Y.
Author_Institution :
Maryland Univ., College Park, MD, USA
Abstract :
The negative bias temperature instability of pMOSFETs is studied. It is found that there is strong frequency dependence of the parameters shift. At a certain high frequency, the threshold voltage shift is only about half of that generated by DC stress. The possible sources of this dependence are explored. An empirical model is established, based on the reduction of fixed oxide charges. This model is further used to explain some observed phenomena.
Keywords :
MOSFET; annealing; interface states; semiconductor device measurement; semiconductor device models; thermal stability; DC stress; dynamic NBTI; fixed oxide charge reduction; interface traps; negative bias temperature instability; pMOSFET; parameter shift frequency dependence; threshold voltage shift; unipolar stress NBTI annealing; Annealing; Degradation; Electron traps; Lead compounds; MOSFETs; Niobium compounds; Silicon; Stress; Threshold voltage; Titanium compounds;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2004 IEEE International
Print_ISBN :
0-7803-8517-9
DOI :
10.1109/IRWS.2004.1422751
