Title :
Micro-masking removal of TSV and cavity during ICP etching using parameter control in 3D and MEMS integrations
Author :
Yu-Chen Hu ; Cheng-Hao Chiang ; Kuo-Hua Chen ; Chi-Tsung Chiu ; Ching-Te Chuang ; Wei Hwang ; Jin-Chern Chiou ; Ho-Ming Tong ; Kuan-Neng Chen
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
In this paper, a detailed examination on TSV and cavity inductive coupled plasma (ICP) etching is presented. We investigated the relation such as etching loop number, TSV etching depth and etching rate. Due to particles knocked off from the hard mask and then fallen down to the TSV and cavity bottom, micro-masking issue becomes serious after ICP etching. In addition, parameters of isotropic etching, pressure, and RF bias were studied to investigate the process of micro-masking removal.
Keywords :
masks; microfabrication; micromechanical devices; sputter etching; three-dimensional integrated circuits; 3D integrated circuit; ICP etching; MEMS integration; RF bias; TSV micromasking removal; cavity micromasking removal; inductive coupled plasma etching; isotropic etching; micromasking issue; Cavity resonators; Etching; Iterative closest point algorithm; Morphology; Radio frequency; Silicon; Through-silicon vias;
Conference_Titel :
Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT), 2012 7th International
Conference_Location :
Taipei
Print_ISBN :
978-1-4673-1635-4
Electronic_ISBN :
2150-5934
DOI :
10.1109/IMPACT.2012.6420268
