Hot carrier stress study in Hf-silicate NMOS transistors

Author

Sim, J.H. ; Lee, B.H. ; Choi, R. ; Song, S.C. ; Young, C.D. ; Zeitzoff, P. ; Kwong, D.L. ; Bersuker, G.

Author_Institution

Int. SEMATECH, Austin, TX, USA

fYear

2004

fDate

18-21 Oct. 2004

Firstpage

136

Lastpage

140

Abstract

Hot carrier stress (HCS) effects in NMOSFETs with HfSiO gate dielectric and poly-Si gate electrode are investigated. Both cold carriers and hot carriers contribute to the reversible V_th shift. In the case of the poly gate electrode, the stress bias dependant positive charge, attributed to the hole generation/trapping process, may complicate evaluation of the constant voltage stress and hot carrier stress. Cold carrier induced hole generation in poly-Si gate devices at high temperature is not desirable for a high-k stack. TiN metal gates show superior stress stability.

Keywords

MOSFET; electron traps; hafnium compounds; hole traps; hot carriers; titanium compounds; CVS; HCS; HfSiO-Si; NMOS transistors; NMOSFET; TiN; cold carrier induced hole generation; constant voltage stress; high-k stacks; hole generation/trapping process; hot carrier stress effects; poly gate electrode; reversible electron trapping; reversible threshold voltage shift; stress bias dependant positive charge; stress stability; Electrodes; High K dielectric materials; High-K gate dielectrics; Hot carriers; MOSFETs; Stability; Stress; Temperature; Tin; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Reliability Workshop Final Report, 2004 IEEE International

Print_ISBN

0-7803-8517-9

Type

conf

DOI

10.1109/IRWS.2004.1422757

Filename

1422757