• DocumentCode
    3073782
  • Title

    Mobility evaluation in high-k devices [MOSFETs]

  • Author

    Bersuker, Gennadi ; Zeitzoff, P. ; Sim, J.H. ; Lee, B.H. ; Choi, R. ; Brown, G. ; Young, C.D.

  • Author_Institution
    Int. SEMATECH, Austin, TX, USA
  • fYear
    2004
  • fDate
    18-21 Oct. 2004
  • Firstpage
    141
  • Lastpage
    144
  • Abstract
    Fast electron trapping in the high-k gate dielectrics is shown to effectively increase the magnitude of the threshold voltage during the DC measurements of the drain current, which leads to underestimation of the intrinsic channel carrier mobility. An approach based on the pulse Id-Vg technique is proposed to estimate a correction factor to the DC mobility.
  • Keywords
    MOSFET; carrier mobility; dielectric thin films; electron traps; semiconductor device measurement; DC mobility correction factor; MOSFET; NMOS transistors; drain current DC measurements; fast electron trapping; high-k gate dielectrics; intrinsic channel carrier mobility; pulse Id-Vg technique; threshold voltage magnitude; Current measurement; Dielectric measurements; Electron mobility; Electron traps; High K dielectric materials; High-K gate dielectrics; Particle measurements; Pulse measurements; Threshold voltage; Time measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Reliability Workshop Final Report, 2004 IEEE International
  • Print_ISBN
    0-7803-8517-9
  • Type

    conf

  • DOI
    10.1109/IRWS.2004.1422758
  • Filename
    1422758
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3073782