Title :
Electrical model analysis of RF/high-speed performance for different designed TSV patterns by wideband double side measurement techniques
Author :
Chun-Hsun Lin ; Liu, Cong ; Hsin-Kai Huang ; Kuang-Ching Fan ; Hsin-Hung Lee
Author_Institution :
Adv. Product Design & Testing Dept., Siliconware Precision Ind. Co., Ltd., Taichung, Taiwan
Abstract :
Within this paper, four different pitches of Through Silicon Via (TSV) of single-ended ground-signal-ground (GSG) signaling configuration with redistribution layer (RDL) and testing pad that ranging from 20 μm, 50 μm, 100 μm to 200 μm has been made to verify the Radio-Frequency (RF) characteristic of TSV. We propose the modified RF electrical equivalent model of TSV with its´ de-embed patterns. With the help of the direct double side probing system, wide band measurement of S-parameters of up to 40 GHz and eye-diagrams of 40 Gb/s signal are made to validate the modeled results.
Keywords :
S-parameters; integrated circuit modelling; integrated circuit testing; microwave integrated circuits; millimetre wave integrated circuits; three-dimensional integrated circuits; RF performance; S-parameters; TSV pattern; bit rate 40 Gbit/s; deembed patterns; electrical model analysis; eye diagrams; frequency 40 GHz; high-speed performance; radio frequency characteristic; redistribution layer; single ended ground-signal-ground signaling; size 100 mum to 200 mum; size 20 mum; size 50 mum; testing pad; wideband double side measurement techniques; Mathematical model; Pollution measurement; Radio frequency; Silicon; Substrates; Testing; Through-silicon vias;
Conference_Titel :
Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT), 2012 7th International
Conference_Location :
Taipei
Print_ISBN :
978-1-4673-1635-4
Electronic_ISBN :
2150-5934
DOI :
10.1109/IMPACT.2012.6420279
