Breaking a nominal through-silicon-via (TSV) and forming a clean cross-section

Author

Ta-Chang Tien ; Ming-Wei Lai ; Shu-Chi Hsu ; Ling-Na Tsai ; Ming-Kan Liang

Author_Institution

Mater. & Chem. Res. Labs., Ind. Technol. Res. Inst., Hsinchu, Taiwan

fYear

2012

fDate

24-26 Oct. 2012

Firstpage

284

Lastpage

286

Abstract

A method for breaking a through-silicon-via (TSV) and forming a clean cross-section is investigated. We use focus-ion-beam (FIB) and diamond saw to create the notches that induce the crack passing through TSV precisely. Bending the sample with two side notches of diamond saw revealed the notch of diamond saw may cause the breaking failure. Only one side notch of silicon sample is an accurate breaking through a TSV with about 1 um diameter. The fracture surface indicates where the cracks originated from and which notch dominates the cross-section of TSV. The Auger electron spectra show the Ga contaminant spreading less than 300 nm from a FIB notch that may provide the information for the nano-scale accuracy of the breaking.

Keywords

cracks; focused ion beam technology; fracture; three-dimensional integrated circuits; Auger electron spectra; breaking failure; crack; cross-section; diamond saw; focus-ion-beam; fracture surface; nominal TSV; through-silicon-via; Accuracy; Diamonds; Silicon; Surface contamination; Surface cracks; Surface treatment; Through-silicon vias;

fLanguage

English

Publisher

ieee

Conference_Titel

Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT), 2012 7th International

Conference_Location

Taipei

ISSN

2150-5934

Print_ISBN

978-1-4673-1635-4

Electronic_ISBN

2150-5934

Type

conf

DOI

10.1109/IMPACT.2012.6420293

Filename

6420293