DocumentCode
3074185
Title
Creation of Slow Traps in MOS Capacitors furing RF Plasma Etching
Author
Tanner, P.G. ; Dimitrijev, S. ; Yeow, Y.T. ; Harrison, H.B.
fYear
1996
fDate
14-14 May 1996
Firstpage
171
Lastpage
173
Keywords
Capacitance-voltage characteristics; MOS capacitors; Plasma applications; Plasma density; Plasma devices; Plasma materials processing; Plasma measurements; Radio frequency; Voltage; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Plasma Process-Induced Damage, 1996 1st International Symposium on
Conference_Location
Santa Clara, CA, USA
Print_ISBN
0-9651577-0-9
Type
conf
DOI
10.1109/PPID.1996.715231
Filename
715231
Link To Document