DocumentCode
3074352
Title
Oxide modification near gate edges due to plasma etching of poly-Si gate in submicron MOSFET
Author
Broick, T. ; Prabhakar, V. ; Werking, J. ; Chan, Y. David ; Viswanathan, C.R.
Author_Institution
University of California at Los Angeles
fYear
1996
fDate
13-14 May 1996
Firstpage
177
Lastpage
180
Keywords
CMOS technology; Etching; MOSFET circuits; Plasma applications; Plasma chemistry; Plasma devices; Plasma materials processing; Plasma measurements; Plasma temperature; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Plasma Process-Induced Damage, 1996 1st International Symposium on
Print_ISBN
0-9651577-0-9
Type
conf
DOI
10.1109/PPID.1996.715232
Filename
715232
Link To Document