Title :
Oxide modification near gate edges due to plasma etching of poly-Si gate in submicron MOSFET
Author :
Broick, T. ; Prabhakar, V. ; Werking, J. ; Chan, Y. David ; Viswanathan, C.R.
Author_Institution :
University of California at Los Angeles
Keywords :
CMOS technology; Etching; MOSFET circuits; Plasma applications; Plasma chemistry; Plasma devices; Plasma materials processing; Plasma measurements; Plasma temperature; Transconductance;
Conference_Titel :
Plasma Process-Induced Damage, 1996 1st International Symposium on
Print_ISBN :
0-9651577-0-9
DOI :
10.1109/PPID.1996.715232
