DocumentCode
3074811
Title
Terahertz heterostructure lasers
Author
Tredicucci, Alessandro ; Köhler, Rüdeger ; Beltram, F. ; Beere, Harvey E. ; Linfield, Edmund H. ; Davies, A. Giles ; Ritchie, David A.
Author_Institution
NEST-INFM, Pisa, Italy
fYear
2003
fDate
10-12 Sept. 2003
Firstpage
17
Lastpage
22
Abstract
Unipolar semiconductor injection lasers emitting at THz frequencies have been demonstrated. The devices, based on the quantum-cascade scheme in GaAs/AlGaAs superlattices, operate in continuous-wave up to 50 K (70 K pulsed) with output powers of several mW.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; quantum cascade lasers; submillimetre wave generation; submillimetre wave lasers; 50 K; 70 K; GaAs-AlGaAs; GaAs/AlGaAs superlattices; continuous-wave operation; heterostructure lasers; quantum-cascade scheme; terahertz lasers; unipolar semiconductor injection lasers; Electromagnetic scattering; Electrons; Frequency; Laser transitions; Optical scattering; Particle scattering; Phonons; Photonic band gap; Quantum cascade lasers; Semiconductor lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Photonics, 2003. MWP 2003 Proceedings. International Topical Meeting on
Print_ISBN
0-7803-8691-4
Type
conf
DOI
10.1109/MWP.2003.1422814
Filename
1422814
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