Title :
Low power polysilicon sources for IR applications
Author :
Das, N.C. ; Jhabvala, M. ; Robinson, D. ; Shu, P.
Author_Institution :
Raytheon Co., Lanham, MD, USA
Abstract :
We have designed and fabricated polysilicon thin film infrared (IR) sources by micromachining technology. These sources are made with a lightly doped middle region for light emission and heavy doping of the supporting legs. The sources are fabricated on a 10 μm thick, low temperature silicon dioxide layer. Different doping levels were used to achieve various source resistances. From the power requirement to reach the required light emission versus source resistance curve it is seen that there exists a resistance value which minimizes the necessary input power
Keywords :
calibration; elemental semiconductors; filament lamps; infrared sources; micromachining; microsensors; silicon; 10 micron; Si; calibration sources; heavy doping; light emission; lightly doped middle region; low power polysilicon sources; low temperature silicon dioxide layer; micromachining; polysilicon thin film IR sources; resistance value; supporting legs; Bridges; Calibration; Etching; Fabrication; Implants; Resistors; Silicon; Substrates; Temperature; Transistors;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
DOI :
10.1109/ICSICT.1998.786499
