DocumentCode
3075000
Title
Low power polysilicon sources for IR applications
Author
Das, N.C. ; Jhabvala, M. ; Robinson, D. ; Shu, P.
Author_Institution
Raytheon Co., Lanham, MD, USA
fYear
1998
fDate
1998
Firstpage
884
Lastpage
886
Abstract
We have designed and fabricated polysilicon thin film infrared (IR) sources by micromachining technology. These sources are made with a lightly doped middle region for light emission and heavy doping of the supporting legs. The sources are fabricated on a 10 μm thick, low temperature silicon dioxide layer. Different doping levels were used to achieve various source resistances. From the power requirement to reach the required light emission versus source resistance curve it is seen that there exists a resistance value which minimizes the necessary input power
Keywords
calibration; elemental semiconductors; filament lamps; infrared sources; micromachining; microsensors; silicon; 10 micron; Si; calibration sources; heavy doping; light emission; lightly doped middle region; low power polysilicon sources; low temperature silicon dioxide layer; micromachining; polysilicon thin film IR sources; resistance value; supporting legs; Bridges; Calibration; Etching; Fabrication; Implants; Resistors; Silicon; Substrates; Temperature; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location
Beijing
Print_ISBN
0-7803-4306-9
Type
conf
DOI
10.1109/ICSICT.1998.786499
Filename
786499
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