DocumentCode :
3075182
Title :
A new release process in surface micromachining-double mask technology
Author :
Yilong, Hao ; Ting, Li ; Liu, Shimei ; Dayu, Tian ; Kui, Luo ; Ke, Deng ; Tiesong, Wang
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
fYear :
1998
fDate :
1998
Firstpage :
899
Lastpage :
902
Abstract :
This paper presents a new process for releasing micromechanical structures in surface micromachining with polysilicon support and LPCVD Si3N4 embedded mask for one polysilicon layer process, which is CMOS compatible and can be adjusted to be suitable for the structure stiffness by changing the distance between two supports. This process may be used for multipolysilicon layer process. The results of test structures show that this process may be a good technology to eliminate the sticking of microstructures to the substrate during the wafer drying after the sacrificial etching process
Keywords :
chemical vapour deposition; etching; masks; micromachining; CMOS compatible; LPCVD Si3N4 embedded mask; Si; Si3N4; double mask technology; freestanding microstructures; micromechanical structures; multipolysilicon layer process; one polysilicon layer process; polysilicon support; release process; sacrificial etching; substrate sticking elimination; surface micromachining; wafer drying; Annealing; CMOS process; Chemical technology; Chemical vapor deposition; Dry etching; Microelectronics; Micromachining; Microstructure; Resists; Structural beams;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
Type :
conf
DOI :
10.1109/ICSICT.1998.786509
Filename :
786509
Link To Document :
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