Title :
InP-based bipolar phototransistors for microwave photonic applications
Author :
Gonzalez, Carmen
Author_Institution :
Lab. OPTO+, Alcatel R&D, Marcoussis, France
Abstract :
Fast optical detectors or optically controlled microwave devices are key elements of microwave photonic systems. With the development and maturity of InP technology, the monolithic integration of high-speed devices, detectors and transistors, into optical receivers has flourished. In an effort to produce a photodetector with intrinsic gain and ability to be integrated directly into an optoelectronic monolithic integrated circuit (OEMIC) with heterojunction bipolar transistors (HBTs), heterojunction bipolar phototransistors (photo-HBTs) have been widely investigated, in this paper, we will survey the state of the art performance of InP photo-HBTs and circuits based on this device.
Keywords :
III-V semiconductors; heterojunction bipolar transistors; indium compounds; integrated optoelectronics; microwave detectors; microwave photonics; monolithic integrated circuits; photodetectors; phototransistors; InP; InP photo-HBT; InP technology; InP-based phototransistors; bipolar phototransistors; fast optical detectors; heterojunction bipolar phototransistors; heterojunction bipolar transistors; high-speed devices; intrinsic gain; microwave photonic applications; microwave photonic systems; monolithic integration; optical receivers; optically controlled microwave devices; optoelectronic monolithic integrated circuit; Control systems; High speed optical techniques; Indium phosphide; Microwave devices; Monolithic integrated circuits; Optical control; Optical detectors; Optical devices; Optical receivers; Phototransistors;
Conference_Titel :
Microwave Photonics, 2003. MWP 2003 Proceedings. International Topical Meeting on
Print_ISBN :
0-7803-8691-4
DOI :
10.1109/MWP.2003.1422837
