Title :
The computer simulation and calculation for the strain distribution of the twin-isles high temperature pressure sensor
Author :
Suying, Yao ; Wei, Zhang ; Hongwei, Qu ; Ganru, Mao ; Weixin, Zhang ; Yongsheng, Li
Author_Institution :
Sch. of Electron. Inf. & Eng., Tianjin Univ., China
Abstract :
In this paper, the strain distribution of the twin-isles structure of polysilicon pressure sensor has been simulated and calculated by computer through finite element method. The 3-D patterns have been plotted. According to the law of strain distribution of twin-isles structure, the design of polysilicon strain resistance is optimized. Moreover, the disadvantage that piezoresistive coefficients of polysilicon are lower than single-crystal silicon is remedied. The twin-isles structure polysilicon piezoresistance pressure sensors are fabricated. They have high sensitivity and high working temperature. The results of experiments agree with calculation
Keywords :
digital simulation; elemental semiconductors; finite element analysis; high-temperature electronics; internal stresses; piezoresistive devices; pressure sensors; silicon; 3-D patterns; Si; computer simulation; finite element method; high sensitivity; high working temperature; piezoresistive coefficients; polysilicon piezoresistance pressure sensors; polysilicon pressure sensor; strain distribution; twin-isles high temperature pressure sensor; Capacitive sensors; Chemical sensors; Computational modeling; Computer simulation; Distributed computing; Finite element methods; Piezoresistance; Silicon; Strain measurement; Temperature sensors;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
DOI :
10.1109/ICSICT.1998.786516
