Title :
Polysilicon piezoresistive pressure sensor and its temperature compensation
Author :
Hongwei, Qu ; Suying, Yao ; Rong, Zhang ; Ganru, Mao ; Weixin, Zhang ; Xiaoqiang, Ma ; Lei, Ling
Author_Institution :
Dept. of Microelectron., Tianjin Univ., China
Abstract :
The polysilicon sensor is one of the most prospective pressure sensors because of its good performance at relatively high temperature. In this paper we put forward a technique to compensate its negative sensitivity temperature drift that prohibits its successful utilization in wide range of temperature. The technique is inexpensive and easy to practice in applications
Keywords :
elemental semiconductors; high-temperature electronics; piezoresistive devices; pressure sensors; silicon; Si; high temperature; negative sensitivity temperature drift; polysilicon piezoresistive pressure sensor; polysilicon sensor; temperature compensation; Bridge circuits; Doping; Ion implantation; Piezoresistance; Resistors; Sensor phenomena and characterization; Silicon; Stress; Temperature distribution; Temperature sensors;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
DOI :
10.1109/ICSICT.1998.786518
