DocumentCode :
3075517
Title :
Charging Effects In Ion Implantation: Measurements and Models
Author :
Current, Michael ; Vella, Michael C. ; Lukaszek, Wes
Author_Institution :
Berkeley National Lab
fYear :
1996
fDate :
13-14 May 1996
Firstpage :
202
Lastpage :
205
Keywords :
Current measurement; Ion beams; Ion implantation; Particle beams; Plasma density; Plasma immersion ion implantation; Plasma measurements; Plasma properties; Plasma sources; Semiconductor device modeling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Plasma Process-Induced Damage, 1996 1st International Symposium on
Print_ISBN :
0-9651577-0-9
Type :
conf
DOI :
10.1109/PPID.1996.715238
Filename :
715238
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3075517
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