• DocumentCode
    3075620
  • Title

    High-temperature pressure and temperature multi-function sensors

  • Author

    Liu Xiaowei ; Wei, Wang ; Xilian, Wang ; Yuqiang, Liu ; Zhenmao, Liu ; Maojun, Fan

  • Author_Institution
    Harbin Inst. of Technol., China
  • fYear
    1998
  • fDate
    1998
  • Firstpage
    947
  • Lastpage
    949
  • Abstract
    High-temperature pressure and temperature multi-function sensors have been fabricated using polysilicon as piezoresistor and silver resistors as thermometer. The polysilicon SOI structure is able to operate at high temperature. Over the range of room temperature to 350°C, the pressure and temperature properties of the sensors have been measured. For 0.6 Mpa full scale pressure, the typical pressure sensitivity is 4.42 mV/V/MPa at 27°C and 3.32 mV/V/MPa at 352°C, with temperature coefficient of -0.077%°C-1. The silver thermometer has the temperature coefficient of +0.242%°C-1, with good linearity
  • Keywords
    elemental semiconductors; high-temperature techniques; piezoresistive devices; pressure sensors; silicon; silicon-on-insulator; temperature sensors; thin film resistors; 0.6 MPa; 25 to 350 C; 27 C; 352 C; Ag; Si; Si-SiO2; Wheatstone bridge; high temperature multifunction sensors; linearity; piezoresistive sensors; piezoresistor; polysilicon SOI structure; pressure sensitivity; pressure sensors; silver resistors; temperature sensors; thermometer; Linearity; Piezoresistance; Piezoresistive devices; Pressure measurement; Resistors; Sensor phenomena and characterization; Silicon; Silver; Temperature sensors; Thermal sensors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    0-7803-4306-9
  • Type

    conf

  • DOI
    10.1109/ICSICT.1998.786537
  • Filename
    786537