• DocumentCode
    3075686
  • Title

    Ion-implantation-induced damage to gate oxide due to charge injection and ion bombardment

  • Author

    Marneno, K. ; Nagasawa, Hideharu ; Nishida, Atsuhiro ; Fujiwara, Hideaki

  • Author_Institution
    Sanyo Electric. Co., ltd
  • fYear
    1996
  • fDate
    14-14 May 1996
  • Firstpage
    206
  • Lastpage
    209
  • Keywords
    Antenna measurements; Current measurement; Degradation; Design for quality; Electrodes; Ion implantation; MOS capacitors; Paramagnetic resonance; Plasma immersion ion implantation; Plasma measurements;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Plasma Process-Induced Damage, 1996 1st International Symposium on
  • Conference_Location
    Santa Clara, CA, USA
  • Print_ISBN
    0-9651577-0-9
  • Type

    conf

  • DOI
    10.1109/PPID.1996.715239
  • Filename
    715239
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3075686