DocumentCode :
3075686
Title :
Ion-implantation-induced damage to gate oxide due to charge injection and ion bombardment
Author :
Marneno, K. ; Nagasawa, Hideharu ; Nishida, Atsuhiro ; Fujiwara, Hideaki
Author_Institution :
Sanyo Electric. Co., ltd
fYear :
1996
fDate :
14-14 May 1996
Firstpage :
206
Lastpage :
209
Keywords :
Antenna measurements; Current measurement; Degradation; Design for quality; Electrodes; Ion implantation; MOS capacitors; Paramagnetic resonance; Plasma immersion ion implantation; Plasma measurements;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Plasma Process-Induced Damage, 1996 1st International Symposium on
Conference_Location :
Santa Clara, CA, USA
Print_ISBN :
0-9651577-0-9
Type :
conf
DOI :
10.1109/PPID.1996.715239
Filename :
715239
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3075686
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