DocumentCode :
3075892
Title :
The Degradation of MOS Devices by Source/Drain Ion Impantation
Author :
Lee, Sangdon ; Son, Jeonghwan ; Yoon, Jaeseog ; Huh, Kijae ; Yang, Dooyoung
Author_Institution :
LG Semicon Co., Ltd.
fYear :
1996
fDate :
13-14 May 1996
Firstpage :
210
Lastpage :
212
Keywords :
Degradation; Leakage current; MOS capacitors; MOS devices; MOSFET circuits; Plasma applications; Plasma properties; Plasma sources; Tunneling; Ultra large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Plasma Process-Induced Damage, 1996 1st International Symposium on
Print_ISBN :
0-9651577-0-9
Type :
conf
DOI :
10.1109/PPID.1996.715240
Filename :
715240
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3075892
