DocumentCode
3076072
Title
Small-feature-size Etching of InP/InGaAsP by inductively coupled plasma at ultra-low pressure
Author
Li, Yongzhuo ; Cui, Kaiyu ; Huang, Yidong ; Feng, Xue ; Wang, Da ; Zhang, Wei
Author_Institution
Dept. of Electron. Eng., Tsinghua Univ., Beijing, China
fYear
2012
fDate
2-6 July 2012
Firstpage
236
Lastpage
237
Abstract
Deep etching for InP/InGaAsP based slotted photonic crystal by inductively coupled plasma at ultra-low pressure was studied. High-aspect-ratio of 28 for 60-nm-wide slots and 17 for air-holes with diameter of 200 nm was achieved, respectively.
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical waveguides; photonic crystals; sputter etching; InP-InGaAsP; double-slot PCWG; double-slot photonic crystal waveguide; inductively coupled plasma; size 200 nm; size 60 nm; small-feature-size deep etching; ultralow pressure; Etching; Indium phosphide; Iterative closest point algorithm; Nanostructures; Photonic crystals; Photonics; Plasmas;
fLanguage
English
Publisher
ieee
Conference_Titel
Opto-Electronics and Communications Conference (OECC), 2012 17th
Conference_Location
Busan
ISSN
2166-8884
Print_ISBN
978-1-4673-0976-9
Electronic_ISBN
2166-8884
Type
conf
DOI
10.1109/OECC.2012.6276458
Filename
6276458
Link To Document