• DocumentCode
    3076137
  • Title

    Enhancement of quantum well intermixing through sputtered SiO2 on InGaAs layer

  • Author

    Chen, Rui-Ren ; Wu, Jui-Pin ; Ding, Wei-Zun ; Tseng, Ling-Yu ; Chiu, Yi-Jen

  • Author_Institution
    Inst. of Electro-Opt. Eng., Nat. Sun Yat-Sen Univ., Kaoshiung, Taiwan
  • fYear
    2012
  • fDate
    2-6 July 2012
  • Firstpage
    245
  • Lastpage
    246
  • Abstract
    Enhancement of quantum well intermixing (QWI) through sputtered SiO2 on InGaAs layer is demonstrated. From large thermal expansion coefficient, blue shift of 60nm improvement over InP junction, also verified by laser fabrication.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; semiconductor growth; semiconductor quantum wells; semiconductor thin films; sputter deposition; thermal expansion; SiO2-InGaAs; blue shift; laser facbrication; quantum well intermixing; sputtered layer; thermal expansion coefficient; Annealing; Indium gallium arsenide; Indium phosphide; Optical device fabrication; Optical waveguides; Thermal expansion;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Opto-Electronics and Communications Conference (OECC), 2012 17th
  • Conference_Location
    Busan
  • ISSN
    2166-8884
  • Print_ISBN
    978-1-4673-0976-9
  • Electronic_ISBN
    2166-8884
  • Type

    conf

  • DOI
    10.1109/OECC.2012.6276462
  • Filename
    6276462
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3076137