DocumentCode :
3076137
Title :
Enhancement of quantum well intermixing through sputtered SiO2 on InGaAs layer
Author :
Chen, Rui-Ren ; Wu, Jui-Pin ; Ding, Wei-Zun ; Tseng, Ling-Yu ; Chiu, Yi-Jen
Author_Institution :
Inst. of Electro-Opt. Eng., Nat. Sun Yat-Sen Univ., Kaoshiung, Taiwan
fYear :
2012
fDate :
2-6 July 2012
Firstpage :
245
Lastpage :
246
Abstract :
Enhancement of quantum well intermixing (QWI) through sputtered SiO2 on InGaAs layer is demonstrated. From large thermal expansion coefficient, blue shift of 60nm improvement over InP junction, also verified by laser fabrication.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor growth; semiconductor quantum wells; semiconductor thin films; sputter deposition; thermal expansion; SiO2-InGaAs; blue shift; laser facbrication; quantum well intermixing; sputtered layer; thermal expansion coefficient; Annealing; Indium gallium arsenide; Indium phosphide; Optical device fabrication; Optical waveguides; Thermal expansion;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Opto-Electronics and Communications Conference (OECC), 2012 17th
Conference_Location :
Busan
ISSN :
2166-8884
Print_ISBN :
978-1-4673-0976-9
Electronic_ISBN :
2166-8884
Type :
conf
DOI :
10.1109/OECC.2012.6276462
Filename :
6276462
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3076137
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