DocumentCode :
3076646
Title :
Transformation of Ti and TiN Cap Layer by Via-Hole Etching
Author :
Sudo, Shoji ; Ichihashi, Yoshinari ; Ikeda, Norihiro ; Taketa, Kaoru ; Marneno, K.
Author_Institution :
SANYO Electric Co., Ltd.
fYear :
1996
fDate :
14-14 May 1996
Firstpage :
230
Lastpage :
233
Keywords :
Argon; Artificial intelligence; Contact resistance; Dry etching; Electrical resistance measurement; Plasma applications; Plasma measurements; Plasma properties; Resists; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Plasma Process-Induced Damage, 1996 1st International Symposium on
Conference_Location :
Santa Clara, CA, USA
Print_ISBN :
0-9651577-0-9
Type :
conf
DOI :
10.1109/PPID.1996.715245
Filename :
715245
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3076646
