Title :
Degradation of perovskite Pb(Zr,Ti)O3 thin films fabricated by pulsed laser ablation
Author :
Masuda, Yoichiro ; Fujita, Shigetaka ; Nishida, Takashi ; Masumoto, Hiroshi ; Hirai, Toshio
Author_Institution :
Dept. of Electr. Eng., Hachinohe Inst. of Technol., Japan
Abstract :
Ferroelectric thin films of Pb(Zr,Ti)O3 (PZT) were prepared on platinum (Pt) and SrRuO3 (SRO) thin film electrodes by the fourth harmonic wave (λ=266 nm) of a pulsed Nd 3+:YAG laser ablation technique. Ferroelectric degradation of ferroelectric thin film capacitors is investigated. As a result, the remanent polarization value of PZT films deposited on an SRO electrode as a buffer layer remained constantly more than 1011 switching cycles. It is confirmed that polarization switching degradation is improved by using an SRO thin film electrode as a buffer layer
Keywords :
dielectric polarisation; ferroelectric capacitors; ferroelectric switching; ferroelectric thin films; lead compounds; pulsed laser deposition; thin film capacitors; PZT; Pb(Zr,Ti)O3 thin films; PbZrO3TiO3; Pt; Pt thin film electrode; SrRuO3; SrRuO3 thin film electrode; buffer layer; degradation; ferroelectric thin film capacitors; ferroelectric thin films; fourth harmonic wave; perovskite; polarization switching degradation; pulsed Nd3+:YAG laser ablation technique; pulsed laser ablation; remanent polarization value; Buffer layers; Degradation; Electrodes; Ferroelectric materials; Laser ablation; Neodymium; Optical pulses; Platinum; Polarization; Transistors;
Conference_Titel :
Applications of Ferroelectrics, 1998. ISAF 98. Proceedings of the Eleventh IEEE International Symposium on
Conference_Location :
Montreux
Print_ISBN :
0-7803-4959-8
DOI :
10.1109/ISAF.1998.786627
