DocumentCode
3077045
Title
The influence of strain on the dielectric behavior of (Bax Sr1-x)Ti1+yO3+z thin films grown by LS-MOCVD on Pt/SiO2/Si
Author
Streiffer, S.K. ; Basceri, C. ; Parker, C.B. ; Lash, S.E. ; Christman, J. ; Maiwa, H. ; Kingon, Angus I.
Author_Institution
Dept. of Mater. Sci. & Eng., North Carolina State Univ., Raleigh, NC, USA
fYear
1998
fDate
1998
Firstpage
31
Lastpage
34
Abstract
The strain state and its coupling to dielectric behavior have been investigated for {100} BST thin films deposited on Pt/SiO2/Si at 640°C. It is estimated from X-ray diffraction that the in-plane biaxial strain is approximately 0.7%. We postulate that this is of sufficient magnitude to confine any spontaneous polarization to the plane of the film. The thickness-corrected dielectric behavior perpendicular to the substrate for these samples shows evidence of coupling to such an in-plane phase transition at approximately 390 K, as manifested by deviation from Curie-Weiss-like behavior at this temperature
Keywords
MOCVD coatings; X-ray diffraction; barium compounds; dielectric polarisation; ferroelectric materials; ferroelectric thin films; internal stresses; permittivity; strontium compounds; (BaxSr1-x)Ti1+yO3+z thin films; (BaSr)TiO3; 640 degC; Curie-Weiss-like behavior; LS-MOCVD; Pt; Pt/SiO2/Si; Si; SiO2; X-ray diffraction; dielectric behavior; in-plane biaxial strain; in-plane phase transition; spontaneous polarization; strain effect; strain state; thickness-corrected dielectric behavior; Binary search trees; Capacitive sensors; Dielectric films; Dielectric substrates; Dielectric thin films; Polarization; Semiconductor thin films; Sputtering; Temperature; X-ray diffraction;
fLanguage
English
Publisher
ieee
Conference_Titel
Applications of Ferroelectrics, 1998. ISAF 98. Proceedings of the Eleventh IEEE International Symposium on
Conference_Location
Montreux
ISSN
1099-4734
Print_ISBN
0-7803-4959-8
Type
conf
DOI
10.1109/ISAF.1998.786629
Filename
786629
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