Quantitative determination of the dielectric constant of the interfacial layer in PZT ferroelectric capacitors

Author

Bartic, Andrei T. ; Wouters, Dirk J. ; Sing, Jin ; Norga, Gerd ; Bender, Hugo ; Maes, Herman E.

Author_Institution

IMEC, Leuven, Belgium

fYear

1998

fDate

1998

Firstpage

73

Lastpage

76

Abstract

The crystallization of PbZr_0.2Ti_0.8O₃ thin films was investigated by varying the crystallization temperature and time. Some of the films were not fully crystallized presenting amorphous top layers. The films have been structurally characterized by XTEM and XRD, and electrically characterized by hysteresis and CV measurements. The evolution of orientation and crystallization is observed for the different conditions and is correlated with hysteresis loops. The dielectric constant is determined for both the amorphous layers and the crystalline phase, and the CV behavior is explained

Keywords

X-ray diffraction; crystallisation; dielectric hysteresis; ferroelectric capacitors; ferroelectric materials; ferroelectric thin films; lead compounds; permittivity; thin film capacitors; transmission electron microscopy; CV measurements; PZT; PZT ferroelectric capacitors; PbZr_0.2Ti_0.8O₃; PbZr_0.2Ti_0.8O₃ thin films; PbZrO3TiO3; XRD; XTEM; amorphous top layers; crystallization temperature; crystallization time; dielectric constant; hysteresis; hysteresis loops; interfacial layer; orientation evolution; Amorphous materials; Capacitors; Crystalline materials; Crystallization; Dielectric constant; Ferroelectric films; Ferroelectric materials; Hysteresis; Temperature; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 1998. ISAF 98. Proceedings of the Eleventh IEEE International Symposium on

Conference_Location

Montreux

ISSN

1099-4734

Print_ISBN

0-7803-4959-8

Type

conf

DOI

10.1109/ISAF.1998.786639

Filename

786639