Title :
Quantitative determination of the dielectric constant of the interfacial layer in PZT ferroelectric capacitors
Author :
Bartic, Andrei T. ; Wouters, Dirk J. ; Sing, Jin ; Norga, Gerd ; Bender, Hugo ; Maes, Herman E.
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
The crystallization of PbZr0.2Ti0.8O3 thin films was investigated by varying the crystallization temperature and time. Some of the films were not fully crystallized presenting amorphous top layers. The films have been structurally characterized by XTEM and XRD, and electrically characterized by hysteresis and CV measurements. The evolution of orientation and crystallization is observed for the different conditions and is correlated with hysteresis loops. The dielectric constant is determined for both the amorphous layers and the crystalline phase, and the CV behavior is explained
Keywords :
X-ray diffraction; crystallisation; dielectric hysteresis; ferroelectric capacitors; ferroelectric materials; ferroelectric thin films; lead compounds; permittivity; thin film capacitors; transmission electron microscopy; CV measurements; PZT; PZT ferroelectric capacitors; PbZr0.2Ti0.8O3; PbZr0.2Ti0.8O3 thin films; PbZrO3TiO3; XRD; XTEM; amorphous top layers; crystallization temperature; crystallization time; dielectric constant; hysteresis; hysteresis loops; interfacial layer; orientation evolution; Amorphous materials; Capacitors; Crystalline materials; Crystallization; Dielectric constant; Ferroelectric films; Ferroelectric materials; Hysteresis; Temperature; X-ray scattering;
Conference_Titel :
Applications of Ferroelectrics, 1998. ISAF 98. Proceedings of the Eleventh IEEE International Symposium on
Conference_Location :
Montreux
Print_ISBN :
0-7803-4959-8
DOI :
10.1109/ISAF.1998.786639
