Title :
Dependence of electrical properties of Pb(Zr,Ti)O3 thin films on the grain size and film thickness
Author :
Fujisawa, H. ; Nakashima, S. ; Shimizu, M. ; Niu, H.
Author_Institution :
Dept. of Electron., Himeji Inst. of Technol., Hyogo, Japan
Abstract :
Pb(Zr,Ti)O3(PZT) thin films were grown on Ir bottom electrodes by metalorganic chemical vapor deposition (MOCVD). The grain size of PZT films was changed by changing that of Ir bottom electrodes. It also increased with an increase of the thickness of PZT films. The film thickness dependence of electrical properties of PZT thin films with a different grain size was investigated. Relative dielectric constant and remanent polarization decreased as the film thickness decreased. However, distinct influences of the grain size of PZT thin films on electrical properties were not observed
Keywords :
MOCVD coatings; dielectric polarisation; ferroelectric materials; ferroelectric thin films; grain size; iridium; lead compounds; permittivity; Ir; Ir bottom electrodes; PZT; Pb(Zr,Ti)O3; PbZrO3TiO3; dielectric constant; electrical properties; film thickness; film thickness dependence; grain size; metalorganic chemical vapor deposition; remanent polarization; Dielectric constant; Dielectric thin films; Electrodes; Grain size; Magnetic materials; Scanning electron microscopy; Substrates; Surface morphology; Temperature; Transistors;
Conference_Titel :
Applications of Ferroelectrics, 1998. ISAF 98. Proceedings of the Eleventh IEEE International Symposium on
Conference_Location :
Montreux
Print_ISBN :
0-7803-4959-8
DOI :
10.1109/ISAF.1998.786640
