DocumentCode
3077234
Title
Dependence of electrical properties of Pb(Zr,Ti)O3 thin films on the grain size and film thickness
Author
Fujisawa, H. ; Nakashima, S. ; Shimizu, M. ; Niu, H.
Author_Institution
Dept. of Electron., Himeji Inst. of Technol., Hyogo, Japan
fYear
1998
fDate
1998
Firstpage
77
Lastpage
80
Abstract
Pb(Zr,Ti)O3(PZT) thin films were grown on Ir bottom electrodes by metalorganic chemical vapor deposition (MOCVD). The grain size of PZT films was changed by changing that of Ir bottom electrodes. It also increased with an increase of the thickness of PZT films. The film thickness dependence of electrical properties of PZT thin films with a different grain size was investigated. Relative dielectric constant and remanent polarization decreased as the film thickness decreased. However, distinct influences of the grain size of PZT thin films on electrical properties were not observed
Keywords
MOCVD coatings; dielectric polarisation; ferroelectric materials; ferroelectric thin films; grain size; iridium; lead compounds; permittivity; Ir; Ir bottom electrodes; PZT; Pb(Zr,Ti)O3; PbZrO3TiO3; dielectric constant; electrical properties; film thickness; film thickness dependence; grain size; metalorganic chemical vapor deposition; remanent polarization; Dielectric constant; Dielectric thin films; Electrodes; Grain size; Magnetic materials; Scanning electron microscopy; Substrates; Surface morphology; Temperature; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Applications of Ferroelectrics, 1998. ISAF 98. Proceedings of the Eleventh IEEE International Symposium on
Conference_Location
Montreux
ISSN
1099-4734
Print_ISBN
0-7803-4959-8
Type
conf
DOI
10.1109/ISAF.1998.786640
Filename
786640
Link To Document