Title :
Effect of thickness on the dielectric properties of Pb(Mg1/3 Nb2/3)O3 (PMN) thin film prepared by sol-gel method
Author :
Wakiya, Naolu ; Moon, Ji-Won ; Kiguchi, Takanori ; Shinozaki, Kazuo ; Mizutani, Naoto
Author_Institution :
Dept. of Inorg. Mater., Tokyo Inst. of Technol., Japan
Abstract :
The dependence of thickness on the dielectric and ferroelectric characteristics were examined for a Pb(Mg1/3Nb2/3)O3 (PMN) thin film prepared by the sol-gel method. The films had stoichiometric composition and epitaxially grown on (100)Pt//(100)MgO substrate. The dielectric constant was decreased with the decrease of thickness, however, the frequency dispersion of the dielectric constant which is characteristic for the relaxor was observed. P-E hysteresis was also observed for the PMN thin film, however, the remanent polarization was much smaller than the value reported for PMN bulk ceramics. These facts imply that the size-effect is also observed for relaxor ferroelectrics
Keywords :
dielectric hysteresis; dielectric polarisation; ferroelectric materials; ferroelectric thin films; lead compounds; permittivity; sol-gel processing; stoichiometry; (100)MgO substrate; (100)Pt; MgO; P-E hysteresis; PMN; PMN thin film; Pb(Mg1/3Nb2/3)O3 thin film; PbMgO3NbO3; Pt; dielectric constant; dielectric properties; ferroelectric characteristics; frequency dispersion; relaxor ferroelectrics; remanent polarization; sol-gel method; stoichiometric composition; thickness; Ceramics; Dielectric constant; Dielectric substrates; Dielectric thin films; Ferroelectric films; Ferroelectric materials; Frequency; Hysteresis; Niobium; Polarization;
Conference_Titel :
Applications of Ferroelectrics, 1998. ISAF 98. Proceedings of the Eleventh IEEE International Symposium on
Conference_Location :
Montreux
Print_ISBN :
0-7803-4959-8
DOI :
10.1109/ISAF.1998.786645
