DocumentCode
3077402
Title
Influence of ion implantation on the ferroelectric properties of Pb(Zr,Ti)O3 films
Author
Biegel, W. ; Worz, B. ; Hanika, M. ; Klarmann, R. ; Kuhn, M. ; Schey, B. ; Stritzker, B.
Author_Institution
Inst. fur Phys., Augsburg Univ., Germany
fYear
1998
fDate
1998
Firstpage
105
Lastpage
108
Abstract
Pulsed laser deposition (PLD) was used to deposit Pb(Zr,Ti)O3 (PZT) and (Pb,La)(Zr,Ti)O3 (PLZT) thin films on YBa 2Cu3O7-x (YBCO)//MgO and on technical substrates (high-grade steel Hastelloy). As a typical characterization of ferroelectric materials the P(E) hysteresis loop reflects the mobility of ferroelectric domain walls. We investigate the influence of ion implantation on the ferroelectric behaviour of thin PZT-films produced by PLD. The species of implanted ions (O+,Ca+ ) and the doses (1014-1016 cm-2, 180 keV) were varied to study the influence of the introduced atoms and defects on the ferroelectric properties. The films were investigated by XRD, RBS/Channeling and a RT-66A ferroelectric tester. The influence of thermal treatment of the implanted PZT-films on their ferroelectric properties will be discussed above the background of the induced structural defects and the implanted ions itself
Keywords
Rutherford backscattering; X-ray diffraction; calcium; channelling radiation; crystal defects; dielectric hysteresis; electric domain walls; ferroelectric thin films; heat treatment; ion implantation; lanthanum compounds; lead compounds; oxygen; pulsed laser deposition; 180 keV; MgO; PLZT; PZT; PbLaZrO3TiO3; PbZrO3TiO3; RBS; XRD; YBa2Cu3O7; channeling; ferroelectric domain wall mobility; hysteresis loop; induced structural defects; ion implantation; pulsed laser deposition; thermal treatment; thin films; Ferroelectric films; Ferroelectric materials; Hysteresis; Ion implantation; Optical pulses; Pulsed laser deposition; Sputtering; Steel; X-ray scattering; Yttrium barium copper oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Applications of Ferroelectrics, 1998. ISAF 98. Proceedings of the Eleventh IEEE International Symposium on
Conference_Location
Montreux
ISSN
1099-4734
Print_ISBN
0-7803-4959-8
Type
conf
DOI
10.1109/ISAF.1998.786647
Filename
786647
Link To Document