Title :
Analysis of the electron-beam-induced reaction in the precursor thin films of ferroelectric SrBi2Ta2O9
Author :
Okamura, Soichiro ; Shiosaki, Tadashi
Author_Institution :
Graduate Sch. of Mater. Sci., Nara Inst. of Sci. & Technol., Japan
Abstract :
The electron-beam-induced reaction in the precursor thin films of ferroelectric SrBi2Ta2O9 was investigated by infrared spectroscopy. Precursor solutions were prepared by mixing metal 2-ethylhexanoates. An electron beam was irradiated on the precursor thin films formed on Ag/SiO2/Si substrates. Total electron doses were adjusted ranging from 0 to 1.9×10-3 C/cm2. As a result, it was found that the electron beam resolved -COO- in the metal 2-ethylhexanoates, and metal atoms lost hydrophobic groups and remained in the films as a form of hydroxide. It is a reason why precursor thin films are changed to be insoluble in organic solvents by electron beam irradiation. The SrBi2Ta 2O9 patterns fabricated by the electron-beam-induced process were very leaky though the thin films prepared using the same solutions exhibited good ferroelectric properties
Keywords :
electron beam effects; ferroelectric materials; infrared spectra; materials preparation; strontium compounds; Ag/SiO2/Si substrates; SrBi2Ta2O9; electron dose; electron-beam-induced reaction; ferroelectric; infrared spectroscopy; metal 2-ethylhexanoates; organic solvents; precursor thin films; Electron beams; Ferroelectric films; Ferroelectric materials; Infrared spectra; Leakage current; Materials science and technology; Random access memory; Resists; Solvents; Transistors;
Conference_Titel :
Applications of Ferroelectrics, 1998. ISAF 98. Proceedings of the Eleventh IEEE International Symposium on
Conference_Location :
Montreux
Print_ISBN :
0-7803-4959-8
DOI :
10.1109/ISAF.1998.786663
