Title :
A visible light blinded Si-based IR detector by using multi-layers in MIS structure
Author :
Lin, Y.Y. ; Sun, Y.C. ; Shih, M.C. ; Lan, W.H.
Author_Institution :
Dept. of Electr. Eng., Nat. Univ. of Kaohsiung, Kaohsiung, Taiwan
Abstract :
We demonstrate a visible light blinded IR detector by using multi-layers of SiO2/TiO2 dielectric in a Si based MIS structure. High spectral discrimination among visible light range has achieved due to optical filtering by the SiO2/TiO2 multi-layers. Spectral measurements in reflection of SiO2/TiO2 multi-layers in terms of layer number and thickness and their I-V characteristics have been used to study the spectral response in photo-detection. Spectral responsivity peak at 850 nm with high discrimination in visible light had been achieved in a MIS photo-detector of 12 layers of SiO2/TiO2 dielectric and 100 A in thickness of each layer.
Keywords :
MIS devices; aluminium; infrared detectors; optical filters; optical multilayers; photodetectors; silicon compounds; titanium compounds; ultraviolet spectra; Al-TiO2-SiO2-Si; I-V characteristics; MIS photodetector; MIS structure; Si; dielectric multilayers; layer number; layer thickness; optical filtering; reflection measurements; size 100 A; spectral discrimination; spectral measurements; spectral responsivity; visible light blinded Si-based IR detector; wavelength 850 nm; Detectors; Dielectrics; Films; MIS devices; Optical device fabrication; Reflection; Silicon;
Conference_Titel :
Opto-Electronics and Communications Conference (OECC), 2012 17th
Conference_Location :
Busan
Print_ISBN :
978-1-4673-0976-9
Electronic_ISBN :
2166-8884
DOI :
10.1109/OECC.2012.6276547
