Title :
Advances in quantum dot lasers for telecom and silicon photonics applications
Author :
Arakawa, Yasuhiko
Author_Institution :
Inst. for Nano Quantum Inf. Electron., Univ. of Tokyo, Tokyo, Japan
Abstract :
We discuss recent advances in InAs/GaAs quantum dot lasers for telecom and silicon photonics applications. These include high temperature-stability with high speed modulation, commercialization by QD Laser Inc., and low-threshold quantum dot lasers on Si-substrates by a direct wafer bonding technique. Realization of single quantum dot lasers is also discussed.
Keywords :
III-V semiconductors; elemental semiconductors; gallium arsenide; high-speed optical techniques; indium compounds; nanophotonics; optical modulation; quantum dot lasers; silicon; wafer bonding; InAs-GaAs; InAs/GaAs quantum dot lasers; QD Laser Inc; Si; Si-substrates; direct wafer bonding; high speed modulation; high temperature-stability; silicon photonics applications; telecom applications; Gallium arsenide; Laser theory; Quantum dot lasers; Silicon;
Conference_Titel :
Opto-Electronics and Communications Conference (OECC), 2012 17th
Conference_Location :
Busan
Print_ISBN :
978-1-4673-0976-9
Electronic_ISBN :
2166-8884
DOI :
10.1109/OECC.2012.6276551
