High-speed high-performance vertical-illumination type 100% Ge-on-Si photodetectors for optical data communications

Author

Kim, In Gyoo ; Kim, Sanghoon ; Jang, Ki-Seok ; Joo, Jiho ; Kim, Gyungock

Author_Institution

Electron. & Telecommun. Res. Inst., Daejeon, South Korea

fYear

2012

fDate

2-6 July 2012

Firstpage

527

Lastpage

528

Abstract

We present a high-speed high-responsivity vertical-illumination-type 100% Ge-on-Si photodetector (PD) based on silicon photonics technology. At λ=1550nm, the fabricated germanium photodetectors exhibit the responsivity of 0.92A/W, 0.73 A/W, and 0.45A/W for the data rate of 10Gbps, 25Gbps and 40Gbps, respectively. The devices show the -3dB bandwidth (f_-3dB) up to 45GHz, and display good eye-openings up to 50Gbps data transmission. These results indicate the readiness of the Ge-on-Si PD for optical network communication applications.

Keywords

elemental semiconductors; germanium; integrated optics; optical communication equipment; optical fabrication; photodetectors; Ge-Si; Ge-on-Si photodetectors; Si; bit rate 10 Gbit/s; bit rate 25 Gbit/s; bit rate 40 Gbit/s; data rate; data transmission; eye-opening diagrams; germanium photodetectors; high-speed high-performance vertical-illumination Ge-on-Si PD; optical data communications; optical network communication applications; silicon photonics technology; wavelength 1550 nm; Absorption; Data communication; High speed optical techniques; Optical device fabrication; Optical sensors; Photodetectors; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Opto-Electronics and Communications Conference (OECC), 2012 17th

Conference_Location

Busan

ISSN

2166-8884

Print_ISBN

978-1-4673-0976-9

Electronic_ISBN

2166-8884

Type

conf

DOI

10.1109/OECC.2012.6276555

Filename

6276555