Title :
Influence of interstitial oxygen on the c-axis orientation of sputtered and e-beam evaporated ZnO thin films
Author :
Gupta, Vinay ; Sreenivas, K. ; Fahim, M.
Author_Institution :
Dept. of Phys. & Astrophys., Delhi Univ., India
Abstract :
The influence of interstitial oxygen on the microstructural and the electrical properties of sputtered and e-beam evaporated zinc oxide films has been investigated. The sputtered films are insulating and highly c-axis oriented, whereas the e-beam evaporated films are electrically conducting and polycrystalline with no preferred orientation. A post deposition annealing of the e-beam evaporated ZnO film in hydrogen dramatically enhanced the c-axis orientation as well as the electrical conductivity. Electron spectroscopy for chemical analysis (ESCA) indicates the presence of oxygen at the interstitial sites in e-beam film in appreciable amounts, and the post deposition annealing in hydrogen is found to reduce the interstitial oxygen considerably and enhance the c-axis orientation
Keywords :
ESCA; II-VI semiconductors; annealing; electrical conductivity; electron beam deposition; insulating thin films; interstitials; semiconductor thin films; sputter deposition; zinc compounds; ESCA; ZnO; annealing; c-axis orientation; e-beam evaporated thin films; electrical conductivity; interstitial oxygen; polycrystalline films; sputtered thin films; Annealing; Conductive films; Dielectrics and electrical insulation; Optical films; Oxygen; Physics; Piezoelectric films; Semiconductor films; Sputtering; Zinc oxide;
Conference_Titel :
Applications of Ferroelectrics, 1998. ISAF 98. Proceedings of the Eleventh IEEE International Symposium on
Conference_Location :
Montreux
Print_ISBN :
0-7803-4959-8
DOI :
10.1109/ISAF.1998.786699
