Title :
Polarization phenomena in SrBi2Ta2O9 ferroelectric thin films at the nanometer scale
Author :
Gruverman, A. ; Tokumoto, H.
Author_Institution :
Sony Corp. Res. Centre, Yokohama, Japan
Abstract :
Scanning force microscopy is applied to investigation of domain arrangement and nanoscale switching properties in SrBi2Ta2O9 (SBT) thin films. Correlation between domain contrast and film texture is discussed. Statistical analysis of polarization reversal and local hysteresis loop measurements were performed. Polarization retention properties of SBT films were studied by direct observation of domain structure temporal behavior
Keywords :
atomic force microscopy; bismuth compounds; dielectric hysteresis; dielectric polarisation; electric domains; ferroelectric materials; ferroelectric switching; ferroelectric thin films; nanostructured materials; strontium compounds; texture; SBT thin films; SrBi2Ta2O9; SrBi2Ta2O9 ferroelectric thin films; SrBi2Ta2O9 thin films; domain arrangement; domain contrast; domain structure temporal behavior; film texture; local hysteresis loop; nanometer scale; nanoscale switching properties; polarization phenomena; polarization retention properties; polarization reversal; scanning force microscopy; statistical analysis; Capacitors; Fatigue; Ferroelectric films; Ferroelectric materials; Microscopy; Piezoelectric films; Polarization; Statistical analysis; Transistors; Voltage;
Conference_Titel :
Applications of Ferroelectrics, 1998. ISAF 98. Proceedings of the Eleventh IEEE International Symposium on
Conference_Location :
Montreux
Print_ISBN :
0-7803-4959-8
DOI :
10.1109/ISAF.1998.786723
