Direct observation of potential distribution across ferroelectric capacitor using off-axis electron holography

Author

Honda, K.

Author_Institution

Integrated Mater. Lab., Fujitsu Labs. Ltd., Atsugi, Japan

fYear

1998

fDate

1998

Firstpage

463

Lastpage

466

Abstract

Off-axis electron holography was used to observe the potential distribution across a ferroelectric PbZr_x Ti_1-x (PZT) capacitor and the surrounding electric field made by the spontaneous polarization of the polycrystalline PZT (poly-PZT) thin film. I succeeded in applying it to observations of ferroelectric capacitors. The electric potential has been visualized as the contour pattern corresponding to the equi-phase line of the incident electron beam, whose phase shift was due to the electric field of the PZT thin film. This is the first visualization of the poly-PZT thin film of a ferroelectric memory device by means of electron holography

Keywords

dielectric polarisation; electric potential; electron holography; ferroelectric capacitors; ferroelectric materials; ferroelectric storage; ferroelectric thin films; lead compounds; PZT; PbZr_x Ti_1-x capacitor; PbZrO3TiO3; contour pattern; electric field; electric potential; equi-phase line; ferroelectric capacitor; ferroelectric memory device; off-axis electron holography; phase shift; poly-PZT thin film; polycrystalline PZT; potential distribution; spontaneous polarization; thin film; Capacitors; Electron emission; Ferroelectric films; Ferroelectric materials; Holography; Interference; Polarization; Random access memory; Sputtering; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 1998. ISAF 98. Proceedings of the Eleventh IEEE International Symposium on

Conference_Location

Montreux

ISSN

1099-4734

Print_ISBN

0-7803-4959-8

Type

conf

DOI

10.1109/ISAF.1998.786732

Filename

786732