DocumentCode :
3078809
Title :
Direct observation of potential distribution across ferroelectric capacitor using off-axis electron holography
Author :
Honda, K.
Author_Institution :
Integrated Mater. Lab., Fujitsu Labs. Ltd., Atsugi, Japan
fYear :
1998
fDate :
1998
Firstpage :
463
Lastpage :
466
Abstract :
Off-axis electron holography was used to observe the potential distribution across a ferroelectric PbZrx Ti1-x (PZT) capacitor and the surrounding electric field made by the spontaneous polarization of the polycrystalline PZT (poly-PZT) thin film. I succeeded in applying it to observations of ferroelectric capacitors. The electric potential has been visualized as the contour pattern corresponding to the equi-phase line of the incident electron beam, whose phase shift was due to the electric field of the PZT thin film. This is the first visualization of the poly-PZT thin film of a ferroelectric memory device by means of electron holography
Keywords :
dielectric polarisation; electric potential; electron holography; ferroelectric capacitors; ferroelectric materials; ferroelectric storage; ferroelectric thin films; lead compounds; PZT; PbZrx Ti1-x capacitor; PbZrO3TiO3; contour pattern; electric field; electric potential; equi-phase line; ferroelectric capacitor; ferroelectric memory device; off-axis electron holography; phase shift; poly-PZT thin film; polycrystalline PZT; potential distribution; spontaneous polarization; thin film; Capacitors; Electron emission; Ferroelectric films; Ferroelectric materials; Holography; Interference; Polarization; Random access memory; Sputtering; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applications of Ferroelectrics, 1998. ISAF 98. Proceedings of the Eleventh IEEE International Symposium on
Conference_Location :
Montreux
ISSN :
1099-4734
Print_ISBN :
0-7803-4959-8
Type :
conf
DOI :
10.1109/ISAF.1998.786732
Filename :
786732
Link To Document :
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