Dielectric behavior of quenched PLZT 7/70/30 ceramics

Author

Cheng, Z.-Y. ; Guo, Aqiang ; Yao, X. ; Katiyar, R.S.

Author_Institution

Dept. of Phys., Puerto Rico Univ., Rio Piedras, Puerto Rico

fYear

1998

fDate

1998

Firstpage

521

Lastpage

524

Abstract

The dielectric properties of PLZT 7/70/30 ceramics quenched and annealed at 350°C were measured at temperatures from room temperature to 200°C. It is found that the temperature (T_m) of the dielectric constant maximum is nearly independent of the thermal treatment. The master curve behavior for the temperature dependence of the dielectric constant is discussed. All the results indicate that the dielectric behavior of PLZT-type relaxors is different from that of PMN-type relaxors. For a quenched sample, a very high dielectric loss which decays with time, is observed at the moment the sample is quenched to room temperature

Keywords

annealing; dielectric losses; ferroelectric ceramics; lanthanum compounds; lead compounds; permittivity; quenching (thermal); 20 to 200 degC; 350 degC; PLZT; PbLaZrO3TiO3; annealing; dielectric constant; dielectric loss; quenched ceramics; temperature dependence; Annealing; Ceramics; Dielectric constant; Dielectric losses; Dielectric materials; Dielectric measurements; Ferroelectric materials; Heating; Temperature dependence; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 1998. ISAF 98. Proceedings of the Eleventh IEEE International Symposium on

Conference_Location

Montreux

ISSN

1099-4734

Print_ISBN

0-7803-4959-8

Type

conf

DOI

10.1109/ISAF.1998.786746

Filename

786746