Title :
Modeling and simulation of the electrothermal behavior of the power bipolar transistor
Author :
Maurel, T. ; Bouchakour, R. ; Lallement, C.
Author_Institution :
Dept. Electron., Telecom Paris, France
Abstract :
We have developed a one-dimensional electrothermal model for the bipolar power transistor, implemented in the SABER circuits simulator, in which the device´s temperature becomes an interactive variable during the simulation. The accuracy of the model is appreciated with the electrical and thermal characterization of a NPvN power bipolar transistor using the IC-CAP-SABER interface. The internal behavior of the transistor during transients is shown up through a switching simulation
Keywords :
circuit analysis computing; power bipolar transistors; semiconductor device models; switching; thermal analysis; transients; IC-CAP-SABER interface; NPvN power bipolar transistor; device temperature; electrothermal behavior; interactive variable; internal behavior; one-dimensional electrothermal model; power bipolar transistor; simulation; switching simulation; transients; Analytical models; Bipolar transistors; Charge carrier processes; Circuit simulation; Electron emission; Electron mobility; Electrothermal effects; Neodymium; Semiconductor process modeling; Temperature;
Conference_Titel :
Power Electronics and Drive Systems, 1995., Proceedings of 1995 International Conference on
Print_ISBN :
0-7803-2423-4
DOI :
10.1109/PEDS.1995.404908
