Title :
Oxide thickness effect on quantum capacitance in single-gate MOSFET and CNTFET devices
Author :
Sinha, Sujeet Kumar ; Chaudhury, Santanu
Author_Institution :
Dept. of Electr. Eng., Nat. Inst. of Technol., Silchar, Silchar, India
Abstract :
Carbon nanotube based FET devices are getting more and more importance today because of their high channel mobility and improved gate capacitance versus voltage characteristics. In this paper we compare and analyse the effect of gate capacitance on varying oxide thickness for silicon MOSTFET and CNTFET. It is seen that in nanometre regime quantum capacitance plays the major role in deciding the gate capacitance of a CNTFET and we find a favourable characteristics of decreasing gate capacitance with the decrease in the oxide thickness which is not possible to get in silicon MOSFET.
Keywords :
MOSFET; carbon nanotube field effect transistors; carrier mobility; CNTFET devices; carbon nanotube; channel mobility; oxide thickness effect; quantum capacitance; single-gate MOSFET devices; CNTFETs; Insulators; Logic gates; MOSFET circuits; Quantum capacitance; Silicon; CNTFET; MOSFET; inversion layer capacitance; oxide-thickness; quantum capacitance;
Conference_Titel :
India Conference (INDICON), 2012 Annual IEEE
Conference_Location :
Kochi
Print_ISBN :
978-1-4673-2270-6
DOI :
10.1109/INDCON.2012.6420586
