Title :
Electrooptic characterization of PLT28 thin films by a guided-wave optical technique
Author :
Dogheche, E. ; Boudrioua, A. ; Rémiens, D. ; Loulergue, J.C.
Author_Institution :
Lab. des Mater. Avances Ceramiques, Univ. de Valenciennes, France
Abstract :
Transparent La-modified PbTiO3 (PLT28) thin films were deposited on sapphire substrates by rf magnetron sputtering for optical purpose. The influence of postdeposition annealing conditions on the optical properties of the films was investigated in this study. Guided optical wave techniques based on prism-coupling and optical transmission method were carried out to determine the dispersion of refractive indices. Furthermore, electrooptic (EO) effects of PLT28 thin films prepared with optimum annealing conditions were determined by a technique measuring the change of the resonant coupling angle in the experiment. The results have shown that the optical properties were strongly affected by the annealing process. The linear EO coefficient r13 obtained is about 55pm/V which is much larger than those of the well-known LiNbO3 material
Keywords :
annealing; electro-optical effects; ferroelectric materials; ferroelectric thin films; lanthanum compounds; lead compounds; light transmission; refractive index; sputtered coatings; PLT28 thin films; PbLaTiO3; electro-optic effects; electrooptic characterization; guided-wave optical technique; linear EO coefficient; optical properties; optical transmission; optimum annealing conditions; post-deposition annealing conditions; prism-coupling; refractive indices; resonant coupling angle; rf magnetron sputtering; sapphire substrates; transparent La-modified PbTiO3 thin films; Annealing; Couplings; Electrooptic effects; Optical films; Optical materials; Optical refraction; Optical variables control; Resonance; Sputtering; Transistors;
Conference_Titel :
Applications of Ferroelectrics, 1998. ISAF 98. Proceedings of the Eleventh IEEE International Symposium on
Conference_Location :
Montreux
Print_ISBN :
0-7803-4959-8
DOI :
10.1109/ISAF.1998.786760