Nanosecond pulses for sub-terahertz imaging from avalanching GaAs bipolar transistors

Author

Vainshtein, S.N. ; Kostamovaara, J.T. ; Yuferev, V.S.

Author_Institution

Dept. of Electr. & Inform. Eng., Univ. of Oulu, Oulu, Finland

fYear

2009

fDate

Nov. 3 2009-Oct. 6 2009

Firstpage

87

Lastpage

88

Abstract

We present direct experimental observation of sub-terahertz emission in milliwatt-range nanosecond pulses obtained from miniature GaAs bipolar transistor chips at room temperature. The emission is attributed to the recently introduced Â¿collapsingÂ¿ field domains. This new emitter combined with the high-speed bolometers used in measurements could provide a means for developing unique sub-terahertz imagers.

Keywords

III-V semiconductors; bipolar transistors; bolometers; gallium arsenide; high-speed optical techniques; terahertz wave imaging; GaAs; avalanching bipolar transistors; collapsing field domains; high-speed bolometers; nanosecond pulses; sub-terahertz imaging; temperature 293 K to 298 K; Bipolar transistors; Bolometers; Gallium arsenide; Optical pulses; Photodiodes; Plasma measurements; Plasma temperature; Pulse amplifiers; Pulse measurements; Semiconductor device measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Terahertz and Mid Infrared Radiation: Basic Research and Practical Applications, 2009. TERA-MIR 2009. International Workshop

Conference_Location

Turunc-Marmaris

Print_ISBN

978-1-4244-3848-8

Electronic_ISBN

98-1-4244-3849-5

Type

conf

DOI

10.1109/TERAMIR.2009.5379614

Filename

5379614