Title :
Lifetimes of operating states in terahertz intracenter silicon lasers
Author :
Tsyplenkov, V.V. ; Zhukavin, R.Kh. ; Kovalevsky, K.A. ; Shastin, V.N. ; Huebers, H.-W. ; Pavlov, S.G. ; Abrosimov, N.V. ; Phillips, P.J. ; Carder, D.A.
Author_Institution :
Inst. for Phys. of Microstructures, Nizhny Novgorod, Russia
fDate :
Nov. 3 2009-Oct. 6 2009
Abstract :
The result on theoretical and experimental study of principal states relaxation for terahertz range silicon laser based on phosphor and arsenic shallow donor centers are reported. Numerical simulations show that f-TA and f-LA intervalley phonons scattering dominates in laser state relaxation. The theoretical values of relaxation rates fit well to the experimental data obtained by the pump-and-probe modulated transmission technique.
Keywords :
laser transitions; optical pumping; phosphors; radiative lifetimes; semiconductor lasers; silicon; submillimetre wave lasers; terahertz wave devices; Si; arsenic shallow donor centers; laser state relaxation; phonon scattering; phosphor; pump-and-probe modulated transmission; terahertz intracenter silicon lasers; Free electron lasers; Laser excitation; Laser theory; Laser transitions; Phonons; Physics; Pump lasers; Quantum cascade lasers; Quantum computing; Silicon;
Conference_Titel :
Terahertz and Mid Infrared Radiation: Basic Research and Practical Applications, 2009. TERA-MIR 2009. International Workshop
Conference_Location :
Turunc-Marmaris
Print_ISBN :
978-1-4244-3848-8
Electronic_ISBN :
98-1-4244-3849-5
DOI :
10.1109/TERAMIR.2009.5379617
