Lifetimes of operating states in terahertz intracenter silicon lasers

Author

Tsyplenkov, V.V. ; Zhukavin, R.Kh. ; Kovalevsky, K.A. ; Shastin, V.N. ; Huebers, H.-W. ; Pavlov, S.G. ; Abrosimov, N.V. ; Phillips, P.J. ; Carder, D.A.

Author_Institution

Inst. for Phys. of Microstructures, Nizhny Novgorod, Russia

fYear

2009

fDate

Nov. 3 2009-Oct. 6 2009

Firstpage

85

Lastpage

86

Abstract

The result on theoretical and experimental study of principal states relaxation for terahertz range silicon laser based on phosphor and arsenic shallow donor centers are reported. Numerical simulations show that f-TA and f-LA intervalley phonons scattering dominates in laser state relaxation. The theoretical values of relaxation rates fit well to the experimental data obtained by the pump-and-probe modulated transmission technique.

Keywords

laser transitions; optical pumping; phosphors; radiative lifetimes; semiconductor lasers; silicon; submillimetre wave lasers; terahertz wave devices; Si; arsenic shallow donor centers; laser state relaxation; phonon scattering; phosphor; pump-and-probe modulated transmission; terahertz intracenter silicon lasers; Free electron lasers; Laser excitation; Laser theory; Laser transitions; Phonons; Physics; Pump lasers; Quantum cascade lasers; Quantum computing; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Terahertz and Mid Infrared Radiation: Basic Research and Practical Applications, 2009. TERA-MIR 2009. International Workshop

Conference_Location

Turunc-Marmaris

Print_ISBN

978-1-4244-3848-8

Electronic_ISBN

98-1-4244-3849-5

Type

conf

DOI

10.1109/TERAMIR.2009.5379617

Filename

5379617