DocumentCode :
3079565
Title :
High temperature diamond thin film for capacitor applications
Author :
Carr, Sandra Fries ; Weimer, J.A. ; Tsao, Bang-Hung ; Wu, Richard L.C.
Author_Institution :
Wright Lab., US Air Force, Wright-Patterson AFB, OH, USA
fYear :
1995
fDate :
21-24 Feb 1995
Firstpage :
271
Abstract :
Diamond has some excellent electrical and thermal properties which make it an attractive choice for high temperature, high energy density capacitor applications. Diamond has a very high voltage breakdown strength, a relatively high dielectric constant coupled with the highest thermal conductivity known to mankind. Diamond is also chemically inert, and radiation hard with zero toxicity. This research activity describes and compares capacitors fabricated using polycrystalline diamond, diamond-like carbon films (amorphous diamond), natural diamond and synthetic diamond
Keywords :
diamond; dielectric thin films; electric breakdown; electrical resistivity; power capacitors; thermal conductivity; thin film capacitors; 10 to 1000 kHz; 25 C; 300 C; C; amorphous diamond; capacitor applications; chemically inert; diamond-like carbon films; electrical properties; high dielectric constant; high energy density capacitor applications; high power capacitor; high temperature diamond thin film; high thermal conductivity; high voltage breakdown strength; natural diamond; polycrystalline diamond; radiation hard; synthetic diamond; thermal properties; zero toxicity; Amorphous materials; Capacitors; Diamond-like carbon; Dielectric breakdown; Dielectric thin films; High-K gate dielectrics; Temperature; Thermal conductivity; Toxic chemicals; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics and Drive Systems, 1995., Proceedings of 1995 International Conference on
Print_ISBN :
0-7803-2423-4
Type :
conf
DOI :
10.1109/PEDS.1995.404910
Filename :
404910
Link To Document :
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