DocumentCode
3079565
Title
High temperature diamond thin film for capacitor applications
Author
Carr, Sandra Fries ; Weimer, J.A. ; Tsao, Bang-Hung ; Wu, Richard L.C.
Author_Institution
Wright Lab., US Air Force, Wright-Patterson AFB, OH, USA
fYear
1995
fDate
21-24 Feb 1995
Firstpage
271
Abstract
Diamond has some excellent electrical and thermal properties which make it an attractive choice for high temperature, high energy density capacitor applications. Diamond has a very high voltage breakdown strength, a relatively high dielectric constant coupled with the highest thermal conductivity known to mankind. Diamond is also chemically inert, and radiation hard with zero toxicity. This research activity describes and compares capacitors fabricated using polycrystalline diamond, diamond-like carbon films (amorphous diamond), natural diamond and synthetic diamond
Keywords
diamond; dielectric thin films; electric breakdown; electrical resistivity; power capacitors; thermal conductivity; thin film capacitors; 10 to 1000 kHz; 25 C; 300 C; C; amorphous diamond; capacitor applications; chemically inert; diamond-like carbon films; electrical properties; high dielectric constant; high energy density capacitor applications; high power capacitor; high temperature diamond thin film; high thermal conductivity; high voltage breakdown strength; natural diamond; polycrystalline diamond; radiation hard; synthetic diamond; thermal properties; zero toxicity; Amorphous materials; Capacitors; Diamond-like carbon; Dielectric breakdown; Dielectric thin films; High-K gate dielectrics; Temperature; Thermal conductivity; Toxic chemicals; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics and Drive Systems, 1995., Proceedings of 1995 International Conference on
Print_ISBN
0-7803-2423-4
Type
conf
DOI
10.1109/PEDS.1995.404910
Filename
404910
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