• DocumentCode
    3079565
  • Title

    High temperature diamond thin film for capacitor applications

  • Author

    Carr, Sandra Fries ; Weimer, J.A. ; Tsao, Bang-Hung ; Wu, Richard L.C.

  • Author_Institution
    Wright Lab., US Air Force, Wright-Patterson AFB, OH, USA
  • fYear
    1995
  • fDate
    21-24 Feb 1995
  • Firstpage
    271
  • Abstract
    Diamond has some excellent electrical and thermal properties which make it an attractive choice for high temperature, high energy density capacitor applications. Diamond has a very high voltage breakdown strength, a relatively high dielectric constant coupled with the highest thermal conductivity known to mankind. Diamond is also chemically inert, and radiation hard with zero toxicity. This research activity describes and compares capacitors fabricated using polycrystalline diamond, diamond-like carbon films (amorphous diamond), natural diamond and synthetic diamond
  • Keywords
    diamond; dielectric thin films; electric breakdown; electrical resistivity; power capacitors; thermal conductivity; thin film capacitors; 10 to 1000 kHz; 25 C; 300 C; C; amorphous diamond; capacitor applications; chemically inert; diamond-like carbon films; electrical properties; high dielectric constant; high energy density capacitor applications; high power capacitor; high temperature diamond thin film; high thermal conductivity; high voltage breakdown strength; natural diamond; polycrystalline diamond; radiation hard; synthetic diamond; thermal properties; zero toxicity; Amorphous materials; Capacitors; Diamond-like carbon; Dielectric breakdown; Dielectric thin films; High-K gate dielectrics; Temperature; Thermal conductivity; Toxic chemicals; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics and Drive Systems, 1995., Proceedings of 1995 International Conference on
  • Print_ISBN
    0-7803-2423-4
  • Type

    conf

  • DOI
    10.1109/PEDS.1995.404910
  • Filename
    404910