Title :
Plasmon resonances in a gated two-dimensional electron system with lateral contacts
Author :
Popov, V.V. ; Polischuk, O.V.
Author_Institution :
Kotelnikov Inst. of Radio Eng. & Electron. RAS, Saratov, Russia
fDate :
Nov. 3 2009-Oct. 6 2009
Abstract :
It is shown that plasmon resonances can be effectively excited in the totally screened two-dimensional electron gas channel with lateral contacts at terahertz frequencies. The linewidth of the plasmon resonance in the totally screened two-dimensional electron gas with lateral contacts shrinks down to the electron scattering contribution, which is the minimal theoretical value for the plasmon resonance linewidth.
Keywords :
semiconductor heterojunctions; surface plasmon resonance; two-dimensional electron gas; electron gas channel; gated 2D electron system; lateral contacts; plasmon resonance; Absorption; Dielectric constant; Electrons; Frequency; Indium compounds; Indium gallium arsenide; Plasmons; Resonance; Scattering; Threshold voltage;
Conference_Titel :
Terahertz and Mid Infrared Radiation: Basic Research and Practical Applications, 2009. TERA-MIR 2009. International Workshop
Conference_Location :
Turunc-Marmaris
Print_ISBN :
978-1-4244-3848-8
Electronic_ISBN :
98-1-4244-3849-5
DOI :
10.1109/TERAMIR.2009.5379628
