Terahertz active media on intra-center transitions: tuning by nano-layers

Author

Orlova, E.E. ; Stepanova, A.P.

Author_Institution

Inst. for Phys. of Microstructures, Russian Acad. of Sci., Nizhny Novgorod, Russia

fYear

2009

fDate

Nov. 3 2009-Oct. 6 2009

Firstpage

55

Lastpage

56

Abstract

We show that impurity spectra in delta-doped semiconductor structures can be tailored using a system of wells and barriers with the width smaller than localization radii of impurity states (typically few nanometers). It is expected that optimization of intra-center relaxation in such structures will lead to significant reduction of generation threshold of silicon impurity lasers.

Keywords

elemental semiconductors; impurity absorption spectra; laser transitions; laser tuning; optical materials; semiconductor lasers; silicon; terahertz wave devices; Si; delta-doped semiconductor; impurity lasers; impurity spectra; intra-center transitions; localization radius; nanolayers tuning; terahertz active medium; threshold generation; Gas lasers; Laser transitions; Laser tuning; Pump lasers; Quantum cascade lasers; Quantum dot lasers; Semiconductor impurities; Semiconductor lasers; Silicon; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Terahertz and Mid Infrared Radiation: Basic Research and Practical Applications, 2009. TERA-MIR 2009. International Workshop

Conference_Location

Turunc-Marmaris

Print_ISBN

978-1-4244-3848-8

Electronic_ISBN

98-1-4244-3849-5

Type

conf

DOI

10.1109/TERAMIR.2009.5379630

Filename

5379630