Title :
Terahertz active media on intra-center transitions: tuning by nano-layers
Author :
Orlova, E.E. ; Stepanova, A.P.
Author_Institution :
Inst. for Phys. of Microstructures, Russian Acad. of Sci., Nizhny Novgorod, Russia
fDate :
Nov. 3 2009-Oct. 6 2009
Abstract :
We show that impurity spectra in delta-doped semiconductor structures can be tailored using a system of wells and barriers with the width smaller than localization radii of impurity states (typically few nanometers). It is expected that optimization of intra-center relaxation in such structures will lead to significant reduction of generation threshold of silicon impurity lasers.
Keywords :
elemental semiconductors; impurity absorption spectra; laser transitions; laser tuning; optical materials; semiconductor lasers; silicon; terahertz wave devices; Si; delta-doped semiconductor; impurity lasers; impurity spectra; intra-center transitions; localization radius; nanolayers tuning; terahertz active medium; threshold generation; Gas lasers; Laser transitions; Laser tuning; Pump lasers; Quantum cascade lasers; Quantum dot lasers; Semiconductor impurities; Semiconductor lasers; Silicon; Temperature;
Conference_Titel :
Terahertz and Mid Infrared Radiation: Basic Research and Practical Applications, 2009. TERA-MIR 2009. International Workshop
Conference_Location :
Turunc-Marmaris
Print_ISBN :
978-1-4244-3848-8
Electronic_ISBN :
98-1-4244-3849-5
DOI :
10.1109/TERAMIR.2009.5379630
