DocumentCode :
3079772
Title :
High-resolution X-ray characterization of mid-IR QCL structures
Author :
Kubacka-Traczyk, Justyna ; Sankowska, Iwona ; Kosiel, Kamil ; Bugajski, Maciej
Author_Institution :
Inst. of Electron Technol., Warsaw, Poland
fYear :
2009
fDate :
Nov. 3 2009-Oct. 6 2009
Firstpage :
45
Lastpage :
46
Abstract :
In this paper, five Quantum Cascade Laser structures were investigated by using high-resolution X-ray diffractometry. The information about perfection and periodicity of the structures was derived from simulation of diffraction profiles generated using dynamical diffraction theory. HRXRD characterization enabled to optimize the growth conditions of the laser structures towards achieving the high degree of crystalline quality necessary for optimum device performance.
Keywords :
III-V semiconductors; X-ray diffraction; aluminium compounds; gallium arsenide; periodic structures; quantum cascade lasers; semiconductor quantum wells; GaAs-Al0.45Ga0.55As; HRXRD; crystalline quality; dynamical diffraction theory; high-resolution X-ray diffractometry; mid-IR QCL structures; quantum cascade laser structures; structure perfection; structure periodicity; Electrons; Gallium arsenide; Molecular beam epitaxial growth; Quantum cascade lasers; Quantum well lasers; Satellites; Shape; Submillimeter wave technology; X-ray diffraction; X-ray lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Terahertz and Mid Infrared Radiation: Basic Research and Practical Applications, 2009. TERA-MIR 2009. International Workshop
Conference_Location :
Turunc-Marmaris
Print_ISBN :
978-1-4244-3848-8
Electronic_ISBN :
98-1-4244-3849-5
Type :
conf
DOI :
10.1109/TERAMIR.2009.5379637
Filename :
5379637
Link To Document :
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